Lin, P.-J.; Tien, C.-H.; Wang, T.-Y.; Chen, C.-L.; Ou, S.-L.; Chung, B.-C.; Wuu, D.-S.
On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals 2017, 7, 134.
https://doi.org/10.3390/cryst7050134
AMA Style
Lin P-J, Tien C-H, Wang T-Y, Chen C-L, Ou S-L, Chung B-C, Wuu D-S.
On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals. 2017; 7(5):134.
https://doi.org/10.3390/cryst7050134
Chicago/Turabian Style
Lin, Po-Jung, Ching-Ho Tien, Tzu-Yu Wang, Che-Lin Chen, Sin-Liang Ou, Bu-Chin Chung, and Dong-Sing Wuu.
2017. "On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate" Crystals 7, no. 5: 134.
https://doi.org/10.3390/cryst7050134
APA Style
Lin, P.-J., Tien, C.-H., Wang, T.-Y., Chen, C.-L., Ou, S.-L., Chung, B.-C., & Wuu, D.-S.
(2017). On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals, 7(5), 134.
https://doi.org/10.3390/cryst7050134