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Volume 14
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10.3390/cryst14030253
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Article

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

by
Bohan Guo
1,2,3,
Guohao Yu
1,3,*,
Li Zhang
3,
Jiaan Zhou
3,
Zheming Wang
3,
Runxian Xing
3,
An Yang
2,3,
Yu Li
1,2,3,
Bosen Liu
3,
Xiaohong Zeng
3,
Zhongkai Du
4,
Xuguang Deng
3,
Zhongming Zeng
1,3 and
Baoshun Zhang
1,3,*
1
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
2
Nano Science and Nano Technology Institute, University of Science and Technology of China, Suzhou 215123, China
3
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
4
Suzhou Powerhouse Electronics Technology Co., Ltd., Suzhou 215123, China
*
Authors to whom correspondence should be addressed.
Crystals 2024, 14(3), 253; https://doi.org/10.3390/cryst14030253
Submission received: 6 February 2024 / Revised: 25 February 2024 / Accepted: 29 February 2024 / Published: 4 March 2024
(This article belongs to the Special Issue High Electron Mobility Transistor (HEMT) Devices and Applications)
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Abstract

This article presents the utilization of the chemical–mechanical polishing (CMP) method to fabricate high-performance N-polar GaN/AlGaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) through layer transfer technology. The nucleation and buffer layers were removed via CMP to attain a pristine N-polar GaN surface with elevated smoothness, featuring a low root-mean-square (RMS) roughness of 0.216 nm. Oxygen, carbon, and chlorine impurity elements content were low after the CMP process, as detected via X-ray photoelectron spectroscopy (XPS). The electrical properties of N-polar HEMTs fabricated via CMP exhibited a sheet resistance (Rsh) of 244.7 Ω/sq, a mobility of 1230 cm2/V·s, and an ns of 2.24 × 1013 cm−2. Compared with a counter device fabricated via inductively coupled plasma (ICP) dry etching, the CMP devices showed an improved output current of 756.1 mA/mm, reduced on-resistance of 6.51 Ω·mm, and a significantly reduced subthreshold slope mainly attributed to the improved surface conditions. Meanwhile, owing to the MIS configuration, the reverse gate leakage current could be reduced to as low as 15 μA/mm. These results highlight the feasibility of the CMP-involved epitaxial layer transfer (ELT) technique to deliver superior N-polar GaN MIS-HEMTs for power electronic applications.
Keywords: GaN; N-polar; GaN/AlGaN MIS-HEMT; chemical–mechanical polishing (CMP); layer transfer technology GaN; N-polar; GaN/AlGaN MIS-HEMT; chemical–mechanical polishing (CMP); layer transfer technology

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MDPI and ACS Style

Guo, B.; Yu, G.; Zhang, L.; Zhou, J.; Wang, Z.; Xing, R.; Yang, A.; Li, Y.; Liu, B.; Zeng, X.; et al. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals 2024, 14, 253. https://doi.org/10.3390/cryst14030253

AMA Style

Guo B, Yu G, Zhang L, Zhou J, Wang Z, Xing R, Yang A, Li Y, Liu B, Zeng X, et al. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals. 2024; 14(3):253. https://doi.org/10.3390/cryst14030253

Chicago/Turabian Style

Guo, Bohan, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, and et al. 2024. "High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology" Crystals 14, no. 3: 253. https://doi.org/10.3390/cryst14030253

APA Style

Guo, B., Yu, G., Zhang, L., Zhou, J., Wang, Z., Xing, R., Yang, A., Li, Y., Liu, B., Zeng, X., Du, Z., Deng, X., Zeng, Z., & Zhang, B. (2024). High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals, 14(3), 253. https://doi.org/10.3390/cryst14030253

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