Guo, B.; Yu, G.; Zhang, L.; Zhou, J.; Wang, Z.; Xing, R.; Yang, A.; Li, Y.; Liu, B.; Zeng, X.;
et al. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals 2024, 14, 253.
https://doi.org/10.3390/cryst14030253
AMA Style
Guo B, Yu G, Zhang L, Zhou J, Wang Z, Xing R, Yang A, Li Y, Liu B, Zeng X,
et al. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals. 2024; 14(3):253.
https://doi.org/10.3390/cryst14030253
Chicago/Turabian Style
Guo, Bohan, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng,
and et al. 2024. "High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology" Crystals 14, no. 3: 253.
https://doi.org/10.3390/cryst14030253
APA Style
Guo, B., Yu, G., Zhang, L., Zhou, J., Wang, Z., Xing, R., Yang, A., Li, Y., Liu, B., Zeng, X., Du, Z., Deng, X., Zeng, Z., & Zhang, B.
(2024). High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology. Crystals, 14(3), 253.
https://doi.org/10.3390/cryst14030253
