Micro-Nanoarchitectonics of Ga2O3/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection

Tang, Ruifan; Li, Guanqi; Hu, Xun; Gao, Na; Li, Jinchai; Huang, Kai; Kang, Junyong; Zhang, Rong

doi:10.3390/cryst13020366

Open AccessFeature PaperArticle

Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection

by

Ruifan Tang

^1,2,

Guanqi Li

²,

Xun Hu

²,

Na Gao

²,

Jinchai Li

^2,*

,

Kai Huang

^2,*,

Junyong Kang

²

and

Rong Zhang

²

¹

School of Physics and Electronic Science, Hunan Institute of Science and Technology, Yueyang 414006, China

²

Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China

^*

Authors to whom correspondence should be addressed.

Crystals 2023, 13(2), 366; https://doi.org/10.3390/cryst13020366

Submission received: 3 January 2023 / Revised: 2 February 2023 / Accepted: 15 February 2023 / Published: 20 February 2023

(This article belongs to the Special Issue Recent Advances in III-Nitride Semiconductors)

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Abstract

This study presents broadband ultraviolet photodetectors (BUV PDs) based on Ga₂O₃/GaN core-shell micro-nanorod arrays with excellent performance. Micro-Nanoarchitectonics of Ga₂O₃/GaN core-shell rod arrays were fabricated with high-temperature oxidization of GaN micro-nanorod arrays. The PD based on the microrod arrays exhibited an ultrahigh responsivity of 2300 A/W for 280 nm at 7 V, the peak responsivity was approximately 400 times larger than those of the PD based on the planar Ga₂O₃/GaN film. The responsivity was over 1500 A/W for the 270–360 nm band at 7 V. The external quantum efficiency was up to 1.02 × 10⁶% for 280 nm. Moreover, the responsivity was further increased to 2.65 × 10⁴ A/W for 365 nm and over 1.5 × 10⁴ A/W for 270–360 nm using the nanorod arrays. The physical mechanism may have been attributed to the large surface area of the micro-nanorods coupled with the Ga₂O₃/GaN heterostructure, which excited more photogenerated holes to be blocked at the Ga₂O₃ surface and Ga₂O₃/GaN interface, resulting in a larger internal gain. The overall high performance coupled with large-scale production makes it a promising candidate for practical BUV PD.

Keywords: ultraviolet photodetectors; Ga₂O₃/GaN heterostructure; core-shell micro-nanorod arrays

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MDPI and ACS Style

Tang, R.; Li, G.; Hu, X.; Gao, N.; Li, J.; Huang, K.; Kang, J.; Zhang, R. Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection. Crystals 2023, 13, 366. https://doi.org/10.3390/cryst13020366

AMA Style

Tang R, Li G, Hu X, Gao N, Li J, Huang K, Kang J, Zhang R. Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection. Crystals. 2023; 13(2):366. https://doi.org/10.3390/cryst13020366

Chicago/Turabian Style

Tang, Ruifan, Guanqi Li, Xun Hu, Na Gao, Jinchai Li, Kai Huang, Junyong Kang, and Rong Zhang. 2023. "Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection" Crystals 13, no. 2: 366. https://doi.org/10.3390/cryst13020366

APA Style

Tang, R., Li, G., Hu, X., Gao, N., Li, J., Huang, K., Kang, J., & Zhang, R. (2023). Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection. Crystals, 13(2), 366. https://doi.org/10.3390/cryst13020366

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Micro-Nanoarchitectonics of Ga₂O₃/GaN Core-Shell Rod Arrays for High-Performance Broadband Ultraviolet Photodetection

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