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Journal: CrystalsVolume: 13Number: 62
Article: Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates
- Authors:
- Zhuorui Tang1,2,
- Lin Gu1,2 and
- Hongping Ma1,2,3,*
- et al.
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