A Pathway to High-Quality Heteroepitaxial Ga2O3 Films via Metalorganic Chemical Vapor Deposition

Li, Yifan; Zhang, Yachao; Wang, Kelin; Peng, Guoliang; Xu, Shengrui; Feng, Qian; Ma, Jinbang; Yao, Yixin; Hao, Yue; Zhang, Jincheng

doi:10.3390/mi16121363

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Open AccessArticle

A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition

by

Yifan Li

,

Yachao Zhang

^*,

Kelin Wang

,

Guoliang Peng

,

Shengrui Xu

,

Qian Feng

,

Jinbang Ma

,

Yixin Yao

,

Yue Hao

and

Jincheng Zhang

^*

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2025, 16(12), 1363; https://doi.org/10.3390/mi16121363

Submission received: 25 October 2025 / Revised: 23 November 2025 / Accepted: 26 November 2025 / Published: 29 November 2025

(This article belongs to the Topic Wide Bandgap Semiconductor Electronics and Devices)

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Abstract

This work systematically investigates the heteroepitaxial growth of β-Ga₂O₃ thin films under varied substrate and temperature conditions via metalorganic chemical vapor deposition (MOCVD). Comprehensive characterization reveals that both the substrate type and growth temperature significantly influence the crystalline quality, surface morphology, chemical composition, and defect structure. Films grown at higher temperatures generally exhibit superior crystallinity and closer-to-stoichiometry composition, and thus suggest a reduction in oxygen deficiency. Certain substrates are shown to facilitate high-quality epitaxial growth with smooth surfaces and excellent crystallographic alignment. These findings offer key insights into optimizing growth parameters for high-performance β-Ga₂O₃-based devices.

Keywords: MOCVD; Ga₂O₃; Solid Film

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MDPI and ACS Style

Li, Y.; Zhang, Y.; Wang, K.; Peng, G.; Xu, S.; Feng, Q.; Ma, J.; Yao, Y.; Hao, Y.; Zhang, J. A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition. Micromachines 2025, 16, 1363. https://doi.org/10.3390/mi16121363

AMA Style

Li Y, Zhang Y, Wang K, Peng G, Xu S, Feng Q, Ma J, Yao Y, Hao Y, Zhang J. A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition. Micromachines. 2025; 16(12):1363. https://doi.org/10.3390/mi16121363

Chicago/Turabian Style

Li, Yifan, Yachao Zhang, Kelin Wang, Guoliang Peng, Shengrui Xu, Qian Feng, Jinbang Ma, Yixin Yao, Yue Hao, and Jincheng Zhang. 2025. "A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition" Micromachines 16, no. 12: 1363. https://doi.org/10.3390/mi16121363

APA Style

Li, Y., Zhang, Y., Wang, K., Peng, G., Xu, S., Feng, Q., Ma, J., Yao, Y., Hao, Y., & Zhang, J. (2025). A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition. Micromachines, 16(12), 1363. https://doi.org/10.3390/mi16121363

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A Pathway to High-Quality Heteroepitaxial Ga₂O₃ Films via Metalorganic Chemical Vapor Deposition

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