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Open AccessArticle
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands
by
Yang Yuan
Yang Yuan
Xuesong Zhao
Xuesong Zhao
Jingxin Fan
Jingxin Fan
Zhongjun Yu
Zhongjun Yu
Zhongjun Yu is a Researcher at Aerospace Information Research Institute, Chinese Academy of He his a [...]
Zhongjun Yu is a Researcher at Aerospace Information Research Institute, Chinese Academy of Sciences. He completed his BS and MS in Electronic Engineering from the University of Electronic Science and Technology of China and received his PhD from the School of Electronic, Electrical and Communication Engineering of the University of Chinese Academy of Sciences. Prior to his current position, Zhongjun Yu served as a Research Trainee from 2005 to 2008, as an Assistant Researcher from 2008 to 2013, and as an Associate Researcher from 2014 to 2018 at the Institute of Electronics, Chinese Academy of Sciences. His work in the Field has resulted in 49 publications in various journals, with his research interest focusing on SAR, frequency control, electrical engineering, Microwave technology, and SAR image.
1
Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China
2
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China
*
Author to whom correspondence should be addressed.
Micromachines 2025, 16(12), 1362; https://doi.org/10.3390/mi16121362 (registering DOI)
Submission received: 8 November 2025
/
Revised: 24 November 2025
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Accepted: 27 November 2025
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Published: 29 November 2025
Abstract
In this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode. The optimal impedance regions of the transistors are determined using harmonic load-pull techniques. An on-chip output matching network with second harmonic control functionality is designed to achieve Class-J operation. To verify the feasibility of designed circuits, both power amplifiers are designed and fabricated using a 0.25 mm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The power amplifiers are both biased at 6 V/−1 V. The measured results show the X-band and Ku-band power amplifiers achieve peak saturated output powers of 31.2 dBm and 30.8 dBm, respectively. The power-added efficiencies (PAEs) of the two amplifiers within their operating bands reach up to 48% and 45.3%, respectively. Compact size and high efficiency make them suitable for integration into phased array transmit/receiver (T/R) modules.
Share and Cite
MDPI and ACS Style
Yuan, Y.; Zhao, X.; Fan, J.; Yu, Z.
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands. Micromachines 2025, 16, 1362.
https://doi.org/10.3390/mi16121362
AMA Style
Yuan Y, Zhao X, Fan J, Yu Z.
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands. Micromachines. 2025; 16(12):1362.
https://doi.org/10.3390/mi16121362
Chicago/Turabian Style
Yuan, Yang, Xuesong Zhao, Jingxin Fan, and Zhongjun Yu.
2025. "Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands" Micromachines 16, no. 12: 1362.
https://doi.org/10.3390/mi16121362
APA Style
Yuan, Y., Zhao, X., Fan, J., & Yu, Z.
(2025). Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands. Micromachines, 16(12), 1362.
https://doi.org/10.3390/mi16121362
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