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Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Author to whom correspondence should be addressed.
Micromachines 2018, 9(8), 393;
Received: 29 June 2018 / Revised: 1 August 2018 / Accepted: 6 August 2018 / Published: 7 August 2018
(This article belongs to the Special Issue Development of CMOS-MEMS/NEMS Devices)
PDF [3542 KB, uploaded 7 August 2018]


Micro magnetic field (MMF) sensors developed employing complementary metal oxide semiconductor (CMOS) technology are investigated. The MMF sensors, which are a three-axis sensing type, include a magnetotransistor and four Hall elements. The magnetotransistor is utilized to detect the magnetic field (MF) in the x-axis and y-axis, and four Hall elements are used to sense MF in the z-axis. In addition to emitter, bases and collectors, additional collectors are added to the magnetotransistor. The additional collectors enhance bias current and carrier number, so that the sensor sensitivity is enlarged. The MMF sensor fabrication is easy because it does not require post-CMOS processing. Experiments depict that the MMF sensor sensitivity is 0.69 V/T in the x-axis MF and its sensitivity is 0.55 V/T in the y-axis MF. View Full-Text
Keywords: micro sensor; Hall effect; magnetic field; magnetotransistor micro sensor; Hall effect; magnetic field; magnetotransistor

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Lin, Y.-N.; Dai, C.-L. Micro Magnetic Field Sensors Manufactured Using a Standard 0.18-μm CMOS Process. Micromachines 2018, 9, 393.

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