Next Article in Journal
Fabrication and Characteristics of SnAgCu Alloy Nanowires for Electrical Connection Application
Next Article in Special Issue
Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET
Previous Article in Journal
Manufacturing of All Inkjet-Printed Organic Photovoltaic Cell Arrays and Evaluating Their Suitability for Flexible Electronics
Previous Article in Special Issue
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review
Article Menu
Issue 12 (December) cover image

Export Article

Open AccessArticle
Micromachines 2018, 9(12), 643; https://doi.org/10.3390/mi9120643

Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs

School of Engineering, University of Glasgow, Glasgow G12 8QW, UK
*
Author to whom correspondence should be addressed.
Received: 21 November 2018 / Revised: 29 November 2018 / Accepted: 30 November 2018 / Published: 5 December 2018
(This article belongs to the Special Issue Miniaturized Transistors)
Full-Text   |   PDF [1373 KB, uploaded 5 December 2018]   |  

Abstract

Using a state-of-the-art quantum transport simulator based on the effective mass approximation, we have thoroughly studied the impact of variability on Si x Ge 1 x channel gate-all-around nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) associated with random discrete dopants, line edge roughness, and metal gate granularity. Performance predictions of NWFETs with different cross-sectional shapes such as square, circle, and ellipse are also investigated. For each NWFETs, the effective masses have carefully been extracted from s p 3 d 5 s tight-binding band structures. In total, we have generated 7200 transistor samples and performed approximately 10,000 quantum transport simulations. Our statistical analysis reveals that metal gate granularity is dominant among the variability sources considered in this work. Assuming the parameters of the variability sources are the same, we have found that there is no significant difference of variability between SiGe and Si channel NWFETs. View Full-Text
Keywords: line edge roughness; metal gate granularity; nanowire; non-equilibrium Green’s function; random discrete dopants; SiGe; variability line edge roughness; metal gate granularity; nanowire; non-equilibrium Green’s function; random discrete dopants; SiGe; variability
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Lee, J.; Badami, O.; Carrillo-Nuñez, H.; Berrada, S.; Medina-Bailon, C.; Dutta, T.; Adamu-Lema, F.; Georgiev, V.P.; Asenov, A. Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs. Micromachines 2018, 9, 643.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top