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Open AccessArticle

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea
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Micromachines 2018, 9(12), 619; https://doi.org/10.3390/mi9120619
Received: 12 October 2018 / Revised: 10 November 2018 / Accepted: 20 November 2018 / Published: 24 November 2018
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz. View Full-Text
Keywords: Ku-band; GaN high electron mobility transistor (HEMT); power amplifier; asymmetric power combining; amplitude balance; phase balance Ku-band; GaN high electron mobility transistor (HEMT); power amplifier; asymmetric power combining; amplitude balance; phase balance
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Kim, S.; Lee, M.-P.; Hong, S.-J.; Kim, D.-W. Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells. Micromachines 2018, 9, 619.

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