Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II
Abstract
1. Introduction
2. Experimental Planning
2.1. Experimental Equipment and Materials
2.2. Experimental Principle
- : The blade exposure measured at the nth time.
- : The blade exposure measured at the (n + 1)th height measurement (n = 1, 2, 3, …).
2.3. Basic Experimental Design and Parameter Screening
2.3.1. Basic Experimental Design
2.3.2. Influence Patterns of Single Factors on W1 and W2 and Parameter Determination
3. Response Surface Experimental Design and Result Analysis
3.1. Experimental Protocol
3.2. Response Surface Analysis
3.2.1. Model Establishment and Variance Analysis
3.2.2. Response Surface Analysis of Various Factors on W1
3.2.3. Response Surface Analysis of Various Factors on W2
3.3. Process Parameter Optimization and Experimental Verification
4. Conclusions
- (1)
- Spindle speed ranks as the most critical factor affecting maximum chip width W1, followed by the first dicing depth, with feed rate being the least influential. Based on the single-factor experiment, W1 increases with increasing spindle speed and increasing first dicing depth, although the magnitude of change remains relatively small. Within a certain range, the interaction of feed rate with spindle speed and first dicing depth can lead to an overall improvement in W1. When the spindle speed was 28,000 rpm, the feed rate was 2 mm/s, and the first dicing depth was 270 μm, W1 measured less than 9.14 μm.
- (2)
- In the layered dicing process, the difference in the first dicing depth directly affects the extent of variation in W1 and W2. Under a spindle speed of 24,000 r/min and a feed rate of 2 mm/s, the front maximum chipping width W1 initially decreases and then increases with the first dicing depth, while the back maximum chipping width W2 first increases slowly and then rapidly as the first dicing depth increases.
- (3)
- Preventing the combination of low spindle speed and low feed rate can effectively prevent W2 from becoming excessively large. By strictly controlling the first dicing depth, the accumulation of subsurface damage inside the workpiece can be reduced, thereby suppressing the expansion of the back-side chipping width. In the response surface model, when the spindle speed was held constant, the back maximum chipping width W2 decreased rapidly with simultaneous increases in the first dicing depth and the feed rate, reaching a minimum of 14.83 μm.
- (4)
- Based on the response surface analysis, quadratic regression models for W1 and W2 were established. The NSGA-II multi-objective optimization algorithm was employed to determine the optimal parameter combination, which was then validated experimentally. The resulting relative errors for W1 and W2 were 2.83% and 4.43%, respectively, both falling within 5%. These results confirm the validity of the prediction models for W1 and W2 and provide a reliable reference for improving the dicing quality of silicon carbide in the future.
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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| Hard Blade Series | SSTYE | Concentration | 70 |
|---|---|---|---|
| Abrasive type | SD Synthetic Diamond | Blade Length/mm | 0.89~1.02 |
| Abrasive Grain Size | 3500 | Kerf Width/mm | 0.040~0.050 |
| Bond Hardness | R Hard | Blue Film SPV 224SRB | t = 0.08 mm |
| Factor Name | Low Level | Medium Level | High Level |
|---|---|---|---|
| Spindle Speed r/min | 24,000 | 28,000 | 32,000 |
| Feed Rate mm/s | 2 | 4 | 6 |
| Dicing Depth/μm | 170 | 270 | 370 |
| Index | Response Variable | Response Volume | |||
|---|---|---|---|---|---|
| N r/min | Vf mm/s | ap/mm | W1/μm | W2/μm | |
| 1 | 24,000 | 2 | 0.27 | 16.4600 | 41.9884 |
| 2 | 32,000 | 2 | 0.27 | 5.2321 | 21.3061 |
| 3 | 24,000 | 6 | 0.27 | 15.8926 | 20.5339 |
| 4 | 32,000 | 6 | 0.27 | 12.3021 | 28.8760 |
| 5 | 24,000 | 4 | 0.17 | 25.6322 | 41.3085 |
| 6 | 32,000 | 4 | 0.17 | 10.5029 | 24.3427 |
| 7 | 24,000 | 4 | 0.37 | 10.1196 | 16.1161 |
| 8 | 32,000 | 4 | 0.37 | 14.9193 | 20.4212 |
| 9 | 28,000 | 2 | 0.17 | 12.2723 | 31.8096 |
| 10 | 28,000 | 6 | 0.17 | 18.3310 | 36.8518 |
| 11 | 28,000 | 2 | 0.37 | 9.1143 | 24.7939 |
| 12 | 28,000 | 6 | 0.37 | 10.3690 | 14.8284 |
| 13 | 28,000 | 4 | 0.27 | 9.9527 | 22.2849 |
| 14 | 28,000 | 4 | 0.27 | 8.5128 | 23.7037 |
| 15 | 28,000 | 4 | 0.27 | 12.5022 | 26.9297 |
| Source | W1 | W2 | ||
|---|---|---|---|---|
| F | p | F | p | |
| Model | 16.94 | 0.0031 | 24.83 | 0.0012 |
| A (Spindle speed) | 36.72 | 0.0018 | 18.27 | 0.0079 |
| B (Feed rate) | 11.08 | 0.0208 | 10.34 | 0.0236 |
| C (First dicing depth) | 28.66 | 0.0031 | 98.84 | 0.0002 |
| AB | 6.77 | 0.0481 | 49.25 | 0.0009 |
| AC | 46.12 | 0.0011 | 26.45 | 0.0036 |
| BC | 2.68 | 0.1625 | 13.17 | 0.0151 |
| A2 | 10.38 | 0.0234 | 1.19 | 0.3254 |
| B2 | 0.1663 | 0.7003 | 6.28 | 0.0541 |
| C2 | 10.81 | 0.0218 | 0.004 | 0.9521 |
| Lack of Fit | 0.2124 | 0.8812 | 0.5914 | 0.6777 |
| R2 | 0.9683 | / | R2 | 0.9781 |
| Adjusted R2 | 0.9111 | / | Adjusted R2 | 0.9387 |
| Predicted R2 | 0.8231 | / | Predicted R2 | 0.8093 |
| Experimental Group | Group 1 | Group 2 | Group 3 | Average Value | Predicted Value | |Absolute Error| | Relative Error |
|---|---|---|---|---|---|---|---|
| W1/μm | 5.2043 | 5.0142 | 4.8637 | 5.0274 | 4.8852 | 0.1422 | 2.83% |
| W1/μm | 18.5033 | 19.4528 | 20.2268 | 19.3943 | 18.5360 | 0.8583 | 4.43% |
| Process Parameters | Spindle speed: 31,960 r/min; Feed rate: 2.0019 mm/s; First dicing depth: 197.51 μm | ||||||
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Liu, J.; Du, M.; Wu, J.; Gong, S.; Ouyang, P.; Huang, S.; Chen, F. Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II. Micromachines 2026, 17, 686. https://doi.org/10.3390/mi17060686
Liu J, Du M, Wu J, Gong S, Ouyang P, Huang S, Chen F. Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II. Micromachines. 2026; 17(6):686. https://doi.org/10.3390/mi17060686
Chicago/Turabian StyleLiu, Jian, Meiling Du, Jinzhong Wu, Sheng Gong, Penggen Ouyang, Shuai Huang, and Fengjun Chen. 2026. "Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II" Micromachines 17, no. 6: 686. https://doi.org/10.3390/mi17060686
APA StyleLiu, J., Du, M., Wu, J., Gong, S., Ouyang, P., Huang, S., & Chen, F. (2026). Optimization and Predictive Modeling of SiC Wafer Dicing Using a Thin Diamond Grinding Wheel via RSM and NSGA-II. Micromachines, 17(6), 686. https://doi.org/10.3390/mi17060686

