Next Article in Journal
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures
Next Article in Special Issue
Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes
Previous Article in Journal
W-Band Low-Noise Amplifier with Improved Stability Using Dual RC Traps in Bias Networks on a 0.1 μm GaAs pHEMT Process
Previous Article in Special Issue
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
 
 
Article

Article Versions Notes

Micromachines 2025, 16(2), 220; https://doi.org/10.3390/mi16020220
Action Date Notes Link
article xml file uploaded 15 February 2025 10:43 CET Original file -
article xml uploaded. 15 February 2025 10:43 CET Update https://www.mdpi.com/2072-666X/16/2/220/xml
article pdf uploaded. 15 February 2025 10:43 CET Version of Record https://www.mdpi.com/2072-666X/16/2/220/pdf
article html file updated 15 February 2025 10:46 CET Original file -
article html file updated 24 June 2025 16:37 CEST Update https://www.mdpi.com/2072-666X/16/2/220/html
Back to TopTop