Jia, F.; Chang, Q.; Li, M.; Liu, Y.; Lu, Z.; Zhang, J.; Lai, J.; Lu, H.; Lu, Y.; Hou, B.;
et al. A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment. Micromachines 2024, 15, 1448.
https://doi.org/10.3390/mi15121448
AMA Style
Jia F, Chang Q, Li M, Liu Y, Lu Z, Zhang J, Lai J, Lu H, Lu Y, Hou B,
et al. A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment. Micromachines. 2024; 15(12):1448.
https://doi.org/10.3390/mi15121448
Chicago/Turabian Style
Jia, Fuchun, Qingyuan Chang, Mengdi Li, Yungang Liu, Ziyan Lu, Jifan Zhang, Jinming Lai, Hao Lu, Yang Lu, Bin Hou,
and et al. 2024. "A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment" Micromachines 15, no. 12: 1448.
https://doi.org/10.3390/mi15121448
APA Style
Jia, F., Chang, Q., Li, M., Liu, Y., Lu, Z., Zhang, J., Lai, J., Lu, H., Lu, Y., Hou, B., Yang, L., & Ma, X.
(2024). A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment. Micromachines, 15(12), 1448.
https://doi.org/10.3390/mi15121448
