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Micromachines
Volume 13
Issue 5
10.3390/mi13050748
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Article

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

by
Haitao Zhang
1,2,
Xuanwu Kang
1,*,
Yingkui Zheng
1,
Ke Wei
1,
Hao Wu
1,3,
Xinyu Liu
1,
Tianchun Ye
1 and
Zhi Jin
1,*
1
High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
2
School of Electronic Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
The Institute of Future Lighting, Academy for Engineering and Technology, Fudan University (FAET), Shanghai 200433, China
*
Authors to whom correspondence should be addressed.
Micromachines 2022, 13(5), 748; https://doi.org/10.3390/mi13050748
Submission received: 31 March 2022 / Revised: 5 May 2022 / Accepted: 6 May 2022 / Published: 9 May 2022
(This article belongs to the Special Issue GaN-Based Semiconductor Devices)
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Abstract

In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V characteristics and transient capacitance were measured and analyzed, and the results were simulated and explained by Silvaco TCAD (technology computer aided design). The ionization of acceptor traps and the change of electric potential were monitored in transient simulation to investigate the origin of the capacitance collapse in the SBD. The results suggest the significant impact of traps in the GaN buffer layer on the capacitance collapse of the device, and the secondary capture effect on the variation of acceptor ionization. Based on the study of transient capacitance of SBD, this work could be extended to the Miller capacitance in high electron mobility transistor (HEMT) devices. Moreover, the report on the stability of capacitance is essential for GaN devices, and could be further extended to other aspects of device research.
Keywords: GaN; SBD; Schottky barrier diode; simulation; capacitance collapse; acceptor trap; potential; depletion; secondary capture GaN; SBD; Schottky barrier diode; simulation; capacitance collapse; acceptor trap; potential; depletion; secondary capture

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MDPI and ACS Style

Zhang, H.; Kang, X.; Zheng, Y.; Wei, K.; Wu, H.; Liu, X.; Ye, T.; Jin, Z. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. Micromachines 2022, 13, 748. https://doi.org/10.3390/mi13050748

AMA Style

Zhang H, Kang X, Zheng Y, Wei K, Wu H, Liu X, Ye T, Jin Z. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. Micromachines. 2022; 13(5):748. https://doi.org/10.3390/mi13050748

Chicago/Turabian Style

Zhang, Haitao, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, and Zhi Jin. 2022. "Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode" Micromachines 13, no. 5: 748. https://doi.org/10.3390/mi13050748

APA Style

Zhang, H., Kang, X., Zheng, Y., Wei, K., Wu, H., Liu, X., Ye, T., & Jin, Z. (2022). Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode. Micromachines, 13(5), 748. https://doi.org/10.3390/mi13050748

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