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Micromachines
Volume 13
Issue 12
10.3390/mi13122193
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Article

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer

by
Zhi Lin
*,
Wei Zeng
,
Da Wang
,
Ping Li
and
Shengdong Hu
School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China
*
Author to whom correspondence should be addressed.
Micromachines 2022, 13(12), 2193; https://doi.org/10.3390/mi13122193
Submission received: 19 November 2022 / Revised: 7 December 2022 / Accepted: 8 December 2022 / Published: 10 December 2022
(This article belongs to the Special Issue Semiconductor Power Devices: Reliability and Applications)
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Abstract

In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation. The device introduces an n+-buffer layer between the n−-buffer layer and the n+-substrate to improve the reverse recovery behaviour of its body diode. The n+-buffer layer provides residual carriers during the reverse recovery process, reduces the overshoot voltage, and suppresses oscillation. Simulated results demonstrate that the increment of the on-resistance and the drain-to-source overshoot voltage can be respectively kept below 5% and 20 V, if a 10 μm n+-buffer layer whose impurity concentration ranges from 4 × 1015 cm−3 to 6 × 1016 cm−3 is used. In addition, the fabrication process is the same as that of the conventional SJ-MOSFET. These features make the proposed SJ-MOSFET suitable for inverter applications.
Keywords: super-junction MOSFET; buffer layer; body diode; reverse recovery; oscillation super-junction MOSFET; buffer layer; body diode; reverse recovery; oscillation

Share and Cite

MDPI and ACS Style

Lin, Z.; Zeng, W.; Wang, D.; Li, P.; Hu, S. Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer. Micromachines 2022, 13, 2193. https://doi.org/10.3390/mi13122193

AMA Style

Lin Z, Zeng W, Wang D, Li P, Hu S. Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer. Micromachines. 2022; 13(12):2193. https://doi.org/10.3390/mi13122193

Chicago/Turabian Style

Lin, Zhi, Wei Zeng, Da Wang, Ping Li, and Shengdong Hu. 2022. "Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer" Micromachines 13, no. 12: 2193. https://doi.org/10.3390/mi13122193

APA Style

Lin, Z., Zeng, W., Wang, D., Li, P., & Hu, S. (2022). Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n−/n+-Buffer Layer. Micromachines, 13(12), 2193. https://doi.org/10.3390/mi13122193

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