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Journal: Micromachines, 2021
Volume: 12
Number: 709

Article: On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs
Authors: by Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan and Giovanni Verzellesi
Link: https://www.mdpi.com/2072-666X/12/6/709

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