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Article

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

1
FMN Laboratory, Bauman Moscow State Technical University, 105005 Moscow, Russia
2
Dukhov Automatics Research Institute, (VNIIA), 127055 Moscow, Russia
3
Institute for Theoretical and Applied Electromagnetics RAS, 125412 Moscow, Russia
*
Author to whom correspondence should be addressed.
Academic Editors: Lucia Romano and Konstantins Jefimovs
Micromachines 2021, 12(5), 534; https://doi.org/10.3390/mi12050534
Received: 1 April 2021 / Revised: 30 April 2021 / Accepted: 2 May 2021 / Published: 8 May 2021
Advanced microsystems widely used in integrated optoelectronic devices, energy harvesting components, and microfluidic lab-on-chips require high-aspect silicon microstructures with a precisely controlled profile. Such microstructures can be fabricated using the Bosch process, which is a key process for the mass production of micro-electro-mechanical systems (MEMS) devices. One can measure the etching profile at a cross-section to characterize the Bosch process quality by cleaving the substrate into two pieces. However, the cleaving process of several neighboring deeply etched microstructures is a very challenging and uncontrollable task. The cleaving method affects both the cleaving efficiency and the metrology quality of the resulting etched microstructures. The standard cleaving technique using a diamond scriber does not solve this issue. Herein, we suggest a highly controllable cross-section cleaving method, which minimizes the effect on the resulting deep etching profile. We experimentally compare two cleaving methods based on various auxiliary microstructures: (1) etched transverse auxiliary lines of various widths (from 5 to 100 μm) and positions; and (2) etched dashed auxiliary lines. The interplay between the auxiliary lines and the etching process is analyzed for dense periodic and isolated trenches sized from 2 to 50 μm with an aspect ratio of more than 10. We experimentally showed that an incorrect choice of auxiliary line parameters leads to silicon “build-up” defects at target microstructures intersections, which significantly affects the cross-section profile metrology. Finally, we suggest a highly controllable defect-free cross-section cleaving method utilizing dashed auxiliary lines with the stress concentrators. View Full-Text
Keywords: Bosch process; DRIE of Silicon; MEMS; cross-section cleaving Bosch process; DRIE of Silicon; MEMS; cross-section cleaving
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MDPI and ACS Style

Baklykov, D.A.; Andronic, M.; Sorokina, O.S.; Avdeev, S.S.; Buzaverov, K.A.; Ryzhikov, I.A.; Rodionov, I.A. Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization. Micromachines 2021, 12, 534. https://doi.org/10.3390/mi12050534

AMA Style

Baklykov DA, Andronic M, Sorokina OS, Avdeev SS, Buzaverov KA, Ryzhikov IA, Rodionov IA. Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization. Micromachines. 2021; 12(5):534. https://doi.org/10.3390/mi12050534

Chicago/Turabian Style

Baklykov, Dmitry A., Mihail Andronic, Olga S. Sorokina, Sergey S. Avdeev, Kirill A. Buzaverov, Ilya A. Ryzhikov, and Ilya A. Rodionov. 2021. "Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization" Micromachines 12, no. 5: 534. https://doi.org/10.3390/mi12050534

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