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Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

FMN Laboratory, Bauman Moscow State Technical University, 105005 Moscow, Russia
Dukhov Automatics Research Institute, (VNIIA), 127055 Moscow, Russia
Institute for Theoretical and Applied Electromagnetics RAS, 125412 Moscow, Russia
Author to whom correspondence should be addressed.
Academic Editors: Lucia Romano and Konstantins Jefimovs
Micromachines 2021, 12(5), 534;
Received: 1 April 2021 / Revised: 30 April 2021 / Accepted: 2 May 2021 / Published: 8 May 2021
Advanced microsystems widely used in integrated optoelectronic devices, energy harvesting components, and microfluidic lab-on-chips require high-aspect silicon microstructures with a precisely controlled profile. Such microstructures can be fabricated using the Bosch process, which is a key process for the mass production of micro-electro-mechanical systems (MEMS) devices. One can measure the etching profile at a cross-section to characterize the Bosch process quality by cleaving the substrate into two pieces. However, the cleaving process of several neighboring deeply etched microstructures is a very challenging and uncontrollable task. The cleaving method affects both the cleaving efficiency and the metrology quality of the resulting etched microstructures. The standard cleaving technique using a diamond scriber does not solve this issue. Herein, we suggest a highly controllable cross-section cleaving method, which minimizes the effect on the resulting deep etching profile. We experimentally compare two cleaving methods based on various auxiliary microstructures: (1) etched transverse auxiliary lines of various widths (from 5 to 100 μm) and positions; and (2) etched dashed auxiliary lines. The interplay between the auxiliary lines and the etching process is analyzed for dense periodic and isolated trenches sized from 2 to 50 μm with an aspect ratio of more than 10. We experimentally showed that an incorrect choice of auxiliary line parameters leads to silicon “build-up” defects at target microstructures intersections, which significantly affects the cross-section profile metrology. Finally, we suggest a highly controllable defect-free cross-section cleaving method utilizing dashed auxiliary lines with the stress concentrators. View Full-Text
Keywords: Bosch process; DRIE of Silicon; MEMS; cross-section cleaving Bosch process; DRIE of Silicon; MEMS; cross-section cleaving
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MDPI and ACS Style

Baklykov, D.A.; Andronic, M.; Sorokina, O.S.; Avdeev, S.S.; Buzaverov, K.A.; Ryzhikov, I.A.; Rodionov, I.A. Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization. Micromachines 2021, 12, 534.

AMA Style

Baklykov DA, Andronic M, Sorokina OS, Avdeev SS, Buzaverov KA, Ryzhikov IA, Rodionov IA. Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization. Micromachines. 2021; 12(5):534.

Chicago/Turabian Style

Baklykov, Dmitry A., Mihail Andronic, Olga S. Sorokina, Sergey S. Avdeev, Kirill A. Buzaverov, Ilya A. Ryzhikov, and Ilya A. Rodionov. 2021. "Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization" Micromachines 12, no. 5: 534.

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