Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
Abstract
:1. Introduction
2. Device Structure and Simulation Model
3. Simulation Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Xia, X.; Guo, Z.; Sun, H. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. Micromachines 2021, 12, 1318. https://doi.org/10.3390/mi12111318
Xia X, Guo Z, Sun H. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. Micromachines. 2021; 12(11):1318. https://doi.org/10.3390/mi12111318
Chicago/Turabian StyleXia, Xiaoyu, Zhiyou Guo, and Huiqing Sun. 2021. "Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage" Micromachines 12, no. 11: 1318. https://doi.org/10.3390/mi12111318
APA StyleXia, X., Guo, Z., & Sun, H. (2021). Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. Micromachines, 12(11), 1318. https://doi.org/10.3390/mi12111318