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12 pages, 7442 KiB  
Article
Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator
by Cristina Medina-Bailon, José Luis Padilla, Carlos Sampedro, Luca Donetti, Vihar P. Gergiev, Francisco Gamiz and Asen Asenov
Micromachines 2021, 12(6), 601; https://doi.org/10.3390/mi12060601 - 22 May 2021
Cited by 1 | Viewed by 2477
Abstract
The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this [...] Read more.
The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool. Full article
(This article belongs to the Special Issue Emerging CMOS Devices)
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11 pages, 3617 KiB  
Article
Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
by Cristina Medina-Bailon, Hamilton Carrillo-Nunez, Jaehyun Lee, Carlos Sampedro, Jose Luis Padilla, Luca Donetti, Vihar Georgiev, Francisco Gamiz and Asen Asenov
Micromachines 2020, 11(2), 204; https://doi.org/10.3390/mi11020204 - 16 Feb 2020
Cited by 7 | Viewed by 4478
Abstract
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel [...] Read more.
As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator, which includes a novel module for the direct Source-to-Drain tunneling (S/D tunneling), and its verification in the simulation of Double-Gate Silicon-On-Insulator (DGSOI) transistors and FinFETs. Compared to ballistic Non-Equilibrium Green’s Function (NEGF) simulations, our results show accurate I D vs. V G S and subthreshold characteristics for both devices. Besides, we investigate the impact of the effective masses extracted Density Functional Theory (DFT) simulations, showing that they are the key of not only the general thermionic emission behavior of simulated devices, but also the electron probability of experiencing tunneling phenomena. Full article
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
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