Article Versions Notes

Jorudas J, Šimukovič A, Dub M, Sakowicz M, Prystawko P, Indrišiūnas S, Kovalevskij V, Rumyantsev S, Knap W, Kašalynas I. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines. 2020; 11(12):1131. https://doi.org/10.3390/mi11121131

Jorudas, Justinas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, and Irmantas Kašalynas. 2020. "AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics" Micromachines 11, no. 12: 1131. https://doi.org/10.3390/mi11121131

Jorudas, J., Šimukovič, A., Dub, M., Sakowicz, M., Prystawko, P., Indrišiūnas, S., Kovalevskij, V., Rumyantsev, S., Knap, W., & Kašalynas, I. (2020). AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines, 11(12), 1131. https://doi.org/10.3390/mi11121131