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Open AccessCorrection

Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411

School of Computer Science and Electrical Engineering, Handong Global University, Pohang-si 37554, Korea
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Micromachines 2020, 11(1), 11; https://doi.org/10.3390/mi11010011
Received: 23 July 2019 / Accepted: 17 December 2019 / Published: 19 December 2019
(This article belongs to the Section A:Physics)
Note: In lieu of an abstract, this is an excerpt from the first page.

As this research is a personal achievement with no company-related information, and there is no financial support for this paper from Qualcomm Technologies Inc [...] View Full-Text
MDPI and ACS Style

Park, J.; Yim, Y.U. Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411. Micromachines 2020, 11, 11.

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