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Design and Performance of a J Band MEMS Switch

The 54th Research Institute of China Electronic Science and Technology Group Corporation, Beijing 100070, China
Beihang University, Beijing 100083, China
Department of Mechanical & Materials Engineering, University of Western Ontario, London, ON N6A 3K7, Canada
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(7), 467;
Received: 14 June 2019 / Revised: 11 July 2019 / Accepted: 12 July 2019 / Published: 13 July 2019
(This article belongs to the Special Issue Nanodevices for Microwave and Millimeter Wave Applications)
This paper presents a novel J band (220–325 GHz) MEMS switch design. The equivalent circuits, the major parameters, capacitance, inductance and resistance in the circuit were extracted and calculated quantitatively to carry out the radio frequency analysis. In addition, the mechanical property of the switch structure is analyzed, and the switching voltage is obtained. With the designed parameters, the MEMS switch is fabricated. The measurement results are in good agreement with simulation results, and the switch is actuated under a voltage of ~30 V. More importantly, the switch has achieved a low insertion loss of ~1.2 dB at 220 GHz and <~4 dB from 220 GHz to 270 GHz in the “UP” state, and isolation of ~16 dB from 220 GHz to 320 GHz in the “DOWN” state. Such switch shows great potential in the integration for terahertz components. View Full-Text
Keywords: J band; MEMS; switch J band; MEMS; switch
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MDPI and ACS Style

Zhang, N.; Yan, Z.; Song, R.; Wang, C.; Guo, Q.; Yang, J. Design and Performance of a J Band MEMS Switch. Micromachines 2019, 10, 467.

AMA Style

Zhang N, Yan Z, Song R, Wang C, Guo Q, Yang J. Design and Performance of a J Band MEMS Switch. Micromachines. 2019; 10(7):467.

Chicago/Turabian Style

Zhang, Naibo; Yan, Ze; Song, Ruiliang; Wang, Chunting; Guo, Qiuquan; Yang, Jun. 2019. "Design and Performance of a J Band MEMS Switch" Micromachines 10, no. 7: 467.

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