Article Versions Notes

Shen Z, Qi Y, Mitrovic IZ, Zhao C, Hall S, Yang L, Luo T, Huang Y, Zhao C. Effect of Annealing Temperature for Ni/AlO_x/Pt RRAM Devices Fabricated with Solution-Based Dielectric. Micromachines. 2019; 10(7):446. https://doi.org/10.3390/mi10070446

Shen, Zongjie, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, and Chun Zhao. 2019. "Effect of Annealing Temperature for Ni/AlO_x/Pt RRAM Devices Fabricated with Solution-Based Dielectric" Micromachines 10, no. 7: 446. https://doi.org/10.3390/mi10070446

Shen, Z., Qi, Y., Mitrovic, I. Z., Zhao, C., Hall, S., Yang, L., Luo, T., Huang, Y., & Zhao, C. (2019). Effect of Annealing Temperature for Ni/AlO_x/Pt RRAM Devices Fabricated with Solution-Based Dielectric. Micromachines, 10(7), 446. https://doi.org/10.3390/mi10070446