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Open AccessArticle

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

1
Schools of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
2
State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(7), 461; https://doi.org/10.3390/mi10070461
Received: 5 June 2019 / Revised: 1 July 2019 / Accepted: 5 July 2019 / Published: 8 July 2019
Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-to-device variability at the expense of a greater operation time and more power consumption. This paper proposes a novel write operation for multi-level cell phase change memory: Programmable ramp-down current pulses are utilized to program the RESET initialized memory cells to the expected resistance levels. In addition, a fully differential read circuit with an optional reference current source is employed to complete the readout operation. Eventually, a 2-bit/cell phase change memory chip is presented with a more efficient write operation of a single current pulse and a read access time of 65 ns. Some experiments are implemented to demonstrate the resistance distribution and the drift. View Full-Text
Keywords: multi-level cell; phase change memory; programmable ramp-down current pulses multi-level cell; phase change memory; programmable ramp-down current pulses
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MDPI and ACS Style

Xie, C.; Li, X.; Chen, H.; Li, Y.; Liu, Y.; Wang, Q.; Ren, K.; Song, Z. Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses. Micromachines 2019, 10, 461.

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