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Incorporation of Phosphorus Impurities in a Silicon Nanowire Transistor with a Diameter of 5 nm

Editorial for the Special Issue on Miniaturized Transistors

Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(5), 300;
Received: 25 April 2019 / Accepted: 25 April 2019 / Published: 2 May 2019
(This article belongs to the Special Issue Miniaturized Transistors)
Note: In lieu of an abstract, this is an excerpt from the first page.

Complementary Metal Oxide Semiconductor (CMOS) devices and fabrication techniques have enabled tremendous technological advancements in a short period of time [...] View Full-Text
MDPI and ACS Style

Filipovic, L.; Grasser, T. Editorial for the Special Issue on Miniaturized Transistors. Micromachines 2019, 10, 300.

AMA Style

Filipovic L, Grasser T. Editorial for the Special Issue on Miniaturized Transistors. Micromachines. 2019; 10(5):300.

Chicago/Turabian Style

Filipovic, Lado, and Tibor Grasser. 2019. "Editorial for the Special Issue on Miniaturized Transistors" Micromachines 10, no. 5: 300.

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