Next Article in Journal
A Decoupling Design with T-Shape Structure for the Aluminum Nitride Gyroscope
Next Article in Special Issue
Generation of Pure State Photon Triplets in the C-Band
Previous Article in Journal
Fabrication and Characterization of Micro-Nano Electrodes for Implantable BCI
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Micromachines
Volume 10
Issue 4
10.3390/mi10040243
micromachines-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field

by
Mourad Baira
1,
Bassem Salem
2,
Niyaz Ahamad Madhar
3 and
Bouraoui Ilahi
3,*
1
Micro-Optoelectronic and Nanostructures Laboratory, Faculty of Sciences, University of Monastir, Monastir 5019, Tunisia
2
Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38000 Grenoble, France
3
Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(4), 243; https://doi.org/10.3390/mi10040243
Submission received: 24 March 2019 / Revised: 7 April 2019 / Accepted: 10 April 2019 / Published: 12 April 2019
(This article belongs to the Special Issue Nonlinear Photonics Devices)
Browse Figures
Versions Notes

Abstract

The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the transition energies and the transition dipole moment, particularly for larger dot sizes. These variations strongly influence the intersubband photoabsorption coefficients and changes in the refractive index with an increasing tendency of the 3rd order nonlinear component with increasing both quantum dot (QD) size and applied electric field. The results show that intersubband optical properties of GeSn quantum dots can be successively tuned by external polarization.
Keywords: GeSn; quantum dot; electric field; intersubband nonlinear optics; absorption coefficients; refractive index changes GeSn; quantum dot; electric field; intersubband nonlinear optics; absorption coefficients; refractive index changes

Share and Cite

MDPI and ACS Style

Baira, M.; Salem, B.; Ahamad Madhar, N.; Ilahi, B. Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field. Micromachines 2019, 10, 243. https://doi.org/10.3390/mi10040243

AMA Style

Baira M, Salem B, Ahamad Madhar N, Ilahi B. Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field. Micromachines. 2019; 10(4):243. https://doi.org/10.3390/mi10040243

Chicago/Turabian Style

Baira, Mourad, Bassem Salem, Niyaz Ahamad Madhar, and Bouraoui Ilahi. 2019. "Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field" Micromachines 10, no. 4: 243. https://doi.org/10.3390/mi10040243

APA Style

Baira, M., Salem, B., Ahamad Madhar, N., & Ilahi, B. (2019). Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field. Micromachines, 10(4), 243. https://doi.org/10.3390/mi10040243

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop