Article Versions Notes

Abid I, Kabouche R, Bougerol C, Pernot J, Masante C, Comyn R, Cordier Y, Medjdoub F. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines. 2019; 10(10):690. https://doi.org/10.3390/mi10100690

Abid, Idriss, Riad Kabouche, Catherine Bougerol, Julien Pernot, Cedric Masante, Remi Comyn, Yvon Cordier, and Farid Medjdoub. 2019. "High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates" Micromachines 10, no. 10: 690. https://doi.org/10.3390/mi10100690

Abid, I., Kabouche, R., Bougerol, C., Pernot, J., Masante, C., Comyn, R., Cordier, Y., & Medjdoub, F. (2019). High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates. Micromachines, 10(10), 690. https://doi.org/10.3390/mi10100690