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Journal: Micromachines, 2019
Volume: 10
Number: 30

Article: Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain
Authors: by Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim and Byung-Gook Park
Link: https://www.mdpi.com/2072-666X/10/1/30

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