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Open AccessArticle

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

1
Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan
2
Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Lanxia Cheng
Materials 2016, 9(11), 861; https://doi.org/10.3390/ma9110861
Received: 8 August 2016 / Revised: 17 October 2016 / Accepted: 18 October 2016 / Published: 25 October 2016
This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fill dangling bonds and therefore release interface trapped charges. Compared with a benchmark PHEMT, the AlGaAs/InGaAs MOS-PHEMT using LPD-TiO2 exhibited larger gate bias operation, higher breakdown voltage, suppressed subthreshold characteristics, and reduced flicker noise. As a result, the device with proposed process and using LPD-TiO2 as a gate dielectric is promising for high-speed applications that demand little noise at low frequencies. View Full-Text
Keywords: AlGaAs; pseudomorphic high-electron-mobility transistor (PHEMT); TiO2; flicker noise AlGaAs; pseudomorphic high-electron-mobility transistor (PHEMT); TiO2; flicker noise
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MDPI and ACS Style

Lam, K.-Y.; Huang, J.-S.; Zou, Y.-J.; Lee, K.-W.; Wang, Y.-H. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric. Materials 2016, 9, 861.

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