Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method
Department of Functional Materials, University of Bayreuth, Universitätsstraße 30, Bayreuth 95440, Germany
*
Author to whom correspondence should be addressed.
Materials 2014, 7(8), 5633-5642; https://doi.org/10.3390/ma7085633
Received: 27 June 2014 / Revised: 29 July 2014 / Accepted: 31 July 2014 / Published: 5 August 2014
Al2O3 films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.
View Full-Text
Keywords:
aerosol deposition; film stress; Al2O3; carrier gas; room temperature impact consolidation (RTIC)
▼
Show Figures
Figure 1
This is an open access article distributed under the Creative Commons Attribution License
MDPI and ACS Style
Schubert, M.; Exner, J.; Moos, R. Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method. Materials 2014, 7, 5633-5642.
Show more citation formats
Search more from Scilit
