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Journal: MaterialsVolume: 7Number: 7010
Article: Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
- Authors:
- Keiko Masumoto1,2,*,
- Hirokuni Asamizu1,3 and
- Kentaro Tamura1,3
- et al.
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