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Journal: Materials, 2014
Volume: 7
Number: 7010
7010-7021
Article: Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
Authors: by Keiko Masumoto, Hirokuni Asamizu, Kentaro Tamura, Chiaki Kudou, Johji Nishio, Kazutoshi Kojima, Toshiyuki Ohno and Hajime Okumura
Link: https://www.mdpi.com/1996-1944/7/10/7010

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