Min, S.-R.; Cho, M.-S.; Lee, S.-H.; Park, J.; An, H.-D.; Kim, G.-U.; Yoon, Y.-J.; Seo, J.-H.; Jang, J.-W.; Bae, J.-H.;
et al. Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator. Materials 2022, 15, 819.
https://doi.org/10.3390/ma15030819
AMA Style
Min S-R, Cho M-S, Lee S-H, Park J, An H-D, Kim G-U, Yoon Y-J, Seo J-H, Jang J-W, Bae J-H,
et al. Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator. Materials. 2022; 15(3):819.
https://doi.org/10.3390/ma15030819
Chicago/Turabian Style
Min, So-Ra, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae,
and et al. 2022. "Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator" Materials 15, no. 3: 819.
https://doi.org/10.3390/ma15030819
APA Style
Min, S.-R., Cho, M.-S., Lee, S.-H., Park, J., An, H.-D., Kim, G.-U., Yoon, Y.-J., Seo, J.-H., Jang, J.-W., Bae, J.-H., Lee, S.-H., & Kang, I.-M.
(2022). Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator. Materials, 15(3), 819.
https://doi.org/10.3390/ma15030819
