Choi, Y.; Cho, C.; Yoon, D.; Kang, J.; Kim, J.; Kim, S.Y.; Suh, D.C.; Ko, D.-H.
Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant. Materials 2022, 15, 6918.
https://doi.org/10.3390/ma15196918
AMA Style
Choi Y, Cho C, Yoon D, Kang J, Kim J, Kim SY, Suh DC, Ko D-H.
Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant. Materials. 2022; 15(19):6918.
https://doi.org/10.3390/ma15196918
Chicago/Turabian Style
Choi, Yongjoon, Choonghee Cho, Dongmin Yoon, Joosung Kang, Jihye Kim, So Young Kim, Dong Chan Suh, and Dae-Hong Ko.
2022. "Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant" Materials 15, no. 19: 6918.
https://doi.org/10.3390/ma15196918
APA Style
Choi, Y., Cho, C., Yoon, D., Kang, J., Kim, J., Kim, S. Y., Suh, D. C., & Ko, D.-H.
(2022). Selective Etching of Si versus Si1−xGex in Tetramethyl Ammonium Hydroxide Solutions with Surfactant. Materials, 15(19), 6918.
https://doi.org/10.3390/ma15196918