Wang, J.; Lai, H.; Huang, X.; Liu, J.; Lu, Y.; Liu, P.; Xie, W.
High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors. Materials 2022, 15, 5859.
https://doi.org/10.3390/ma15175859
AMA Style
Wang J, Lai H, Huang X, Liu J, Lu Y, Liu P, Xie W.
High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors. Materials. 2022; 15(17):5859.
https://doi.org/10.3390/ma15175859
Chicago/Turabian Style
Wang, Junfan, Haojie Lai, Xiaoli Huang, Junjie Liu, Yueheng Lu, Pengyi Liu, and Weiguang Xie.
2022. "High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors" Materials 15, no. 17: 5859.
https://doi.org/10.3390/ma15175859
APA Style
Wang, J., Lai, H., Huang, X., Liu, J., Lu, Y., Liu, P., & Xie, W.
(2022). High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors. Materials, 15(17), 5859.
https://doi.org/10.3390/ma15175859