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Journal: Materials, 2022
Volume: 15
Number: 5082
5082
Article: Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnO_x Dielectric Layer Formed by Thermal Oxidation of Sn
Authors: by Shi He, Yanfeng Wang, Genqiang Chen, Juan Wang, Qi Li, Qianwen Zhang, Ruozheng Wang, Minghui Zhang, Wei Wang and Hongxing Wang
Link: https://www.mdpi.com/1996-1944/15/14/5082

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