Next Article in Journal
A Windmill-Shaped Molecule with Anthryl Blades to Form Smooth Hole-Transport Layers via a Photoprecursor Approach
Next Article in Special Issue
New Power MOSFET with Beyond-1D-Limit RSP-BV Trade-Off and Superior Reverse Recovery Characteristics
Previous Article in Journal
Neutron Shielding Performance of 3D-Printed Boron Carbide PEEK Composites
Previous Article in Special Issue
Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell
Open AccessArticle

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

1
International Laboratory of Quantum Optoelectronics, National Research University Higher School of Economics, 16 Soyuza Pechatnikov, St Petersburg 190008, Russia
2
Department of Electronic and Electrical Engineering, Faculty of Engineering Science, University College London, London WC1E 7JE, UK
3
Center for Physics of Nanoheterostructures, Ioffe Institute, 26 Polytechnicheskaya, St Petersburg 194021, Russia
4
Laboratory of Nanophotonics, St. Petersburg Academic University, 8/3 Khlopina, St Petersburg 194021, Russia
*
Author to whom correspondence should be addressed.
Materials 2020, 13(10), 2315; https://doi.org/10.3390/ma13102315
Received: 22 April 2020 / Revised: 14 May 2020 / Accepted: 15 May 2020 / Published: 18 May 2020
(This article belongs to the Special Issue Electronic Materials and Devices)
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found. View Full-Text
Keywords: semiconductor laser; microdisk laser; quantum dots; III–V on Si semiconductor laser; microdisk laser; quantum dots; III–V on Si
Show Figures

Figure 1

MDPI and ACS Style

Zhukov, A.E.; Kryzhanovskaya, N.V.; Moiseev, E.I.; Dragunova, A.S.; Tang, M.; Chen, S.; Liu, H.; Kulagina, M.M.; Kadinskaya, S.A.; Zubov, F.I.; Mozharov, A.M.; Maximov, M.V. InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods. Materials 2020, 13, 2315.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop