Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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Materials 2020, 13(1), 113; https://doi.org/10.3390/ma13010113
Received: 30 October 2019
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Revised: 19 December 2019
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Accepted: 20 December 2019
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Published: 25 December 2019
(This article belongs to the Special Issue Transparent Conductive Films and Their Applications)
Transparent conductive IWO/Cu/IWO (W-doped In2O3) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron–manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10−4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.
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Keywords:
multilayer; thin film; transparent conductive
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MDPI and ACS Style
Han, F.; Zhao, W.; Bi, R.; Tian, F.; Li, Y.; Zheng, C.; Wang, Y. Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films. Materials 2020, 13, 113. https://doi.org/10.3390/ma13010113
AMA Style
Han F, Zhao W, Bi R, Tian F, Li Y, Zheng C, Wang Y. Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films. Materials. 2020; 13(1):113. https://doi.org/10.3390/ma13010113
Chicago/Turabian StyleHan, Fengbo, Wenyuan Zhao, Ran Bi, Feng Tian, Yadan Li, Chuantao Zheng, and Yiding Wang. 2020. "Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films" Materials 13, no. 1: 113. https://doi.org/10.3390/ma13010113
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