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Journal: Materials, 2019
Volume: 12
Number: 689
689
Article: Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics
Authors: by Michitaka Yoshino, Yuto Ando, Manato Deki, Toru Toyabe, Kazuo Kuriyama, Yoshio Honda, Tomoaki Nishimura, Hiroshi Amano, Tetsu Kachi and Tohru Nakamura
Link: https://www.mdpi.com/1996-1944/12/5/689

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