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Open AccessArticle

Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System

1
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
2
Jinan Diamond Technology Co. Ltd, Jinan 250101, China
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(23), 3953; https://doi.org/10.3390/ma12233953
Received: 30 October 2019 / Revised: 25 November 2019 / Accepted: 26 November 2019 / Published: 28 November 2019
(This article belongs to the Special Issue Carbon-Based Materials)
The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C2H2 ion charged particles on the SCD center and edge. View Full-Text
Keywords: single crystal diamond; Homoepitaxy growth; 300 torr single crystal diamond; Homoepitaxy growth; 300 torr
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MDPI and ACS Style

Wang, X.; Duan, P.; Cao, Z.; Liu, C.; Wang, D.; Peng, Y.; Hu, X. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System. Materials 2019, 12, 3953.

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