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Journal: Materials, 2019
Volume: 12
Number: 3468
Article:
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
Authors:
by
Monia Spera, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo and Fabrizio Roccaforte
Link:
https://www.mdpi.com/1996-1944/12/21/3468
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