A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions
Abstract
:1. Introduction
2. Material Properties
3. Dispersion Relation for the p–n Junction of an Inhomogeneous Dielectric Constant
4. Results
4.1. Symmetric Doping Densities
4.2. Asymmetric Doping Densities
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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12.9 | 10.9 | 8 | 8.5 | 0.055 |
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Janipour, M.; Misirlioglu, I.B.; Sendur, K. A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions. Materials 2019, 12, 2412. https://doi.org/10.3390/ma12152412
Janipour M, Misirlioglu IB, Sendur K. A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions. Materials. 2019; 12(15):2412. https://doi.org/10.3390/ma12152412
Chicago/Turabian StyleJanipour, Mohsen, I. Burc Misirlioglu, and Kursat Sendur. 2019. "A Theoretical Treatment of THz Resonances in Semiconductor GaAs p–n Junctions" Materials 12, no. 15: 2412. https://doi.org/10.3390/ma12152412