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Journal: Materials, 2018
Volume: 11
Number: 1736
1736
Article: Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Authors: by George Christian, Menno Kappers, Fabien Massabuau, Colin Humphreys, Rachel Oliver and Philip Dawson
Link: https://www.mdpi.com/1996-1944/11/9/1736

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