Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Christian, G.; Kappers, M.; Massabuau, F.; Humphreys, C.; Oliver, R.; Dawson, P. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials 2018, 11, 1736. https://doi.org/10.3390/ma11091736
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P. Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells. Materials. 2018; 11(9):1736. https://doi.org/10.3390/ma11091736
Chicago/Turabian StyleChristian, George; Kappers, Menno; Massabuau, Fabien; Humphreys, Colin; Oliver, Rachel; Dawson, Philip. 2018. "Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells" Materials 11, no. 9: 1736. https://doi.org/10.3390/ma11091736