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Materials 2017, 10(5), 530;

An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties

Department of Advanced Materials Science and Engineering, SungKyunKwan University, 2006 Seobu-ro, Jangan-gu, Gyeonggi-do, Suwon 16419, Korea
Author to whom correspondence should be addressed.
Academic Editors: Jan Vanfleteren, Fu Hsiang Ko, Chih-Feng Wang and Frederick Bossuyt
Received: 31 March 2017 / Revised: 7 May 2017 / Accepted: 10 May 2017 / Published: 13 May 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
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We have examined the effects of oxygen content and thickness in sputtered InSnO (ITO) electrodes, especially for the application of imperceptible amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) in humidity sensors. The imperceptible a-IGZO TFT with 50-nm ITO electrodes deposited at Ar:O2 = 29:0.3 exhibited good electrical performances with Vth of −0.23 V, SS of 0.34 V/dec, µFE of 7.86 cm2/V∙s, on/off ratio of 8.8 × 107, and has no degradation for bending stress up to a 3.5-mm curvature. The imperceptible oxide TFT sensors showed the highest sensitivity for the low and wide gate bias of −1~2 V under a wide range of relative humidity (40–90%) at drain voltage 1 V, resulting in low power consumption by the sensors. Exposure to water vapor led to a negative shift in the threshold voltage (or current enhancement), and an increase in relative humidity induced continuous threshold voltage shift. In particular, compared to conventional resistor-type sensors, the imperceptible oxide TFT sensors exhibited extremely high sensitivity from a current amplification of >103. View Full-Text
Keywords: a-IGZO TFT; imperceptible; ITO; humidity sensor a-IGZO TFT; imperceptible; ITO; humidity sensor

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Kim, K.S.; Ahn, C.H.; Kang, W.J.; Cho, S.W.; Jung, S.H.; Yoon, D.H.; Cho, H.K. An All Oxide-Based Imperceptible Thin-Film Transistor with Humidity Sensing Properties. Materials 2017, 10, 530.

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