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Journal: Energies, 2025
Volume: 18
Number: 2331
2331
Article: Performance Improvement of Vertical Channel Indium–Gallium–Zinc Oxide Thin-Film Transistors Using Porous MXene Electrode
Authors: by Wanqiang Fu, Qizhen Chen, Peng Gao, Linqin Jiang, Yu Qiu, Dong-Sing Wuu, Ray-Hua Horng and Shui-Yang Lien
Link: https://www.mdpi.com/1996-1073/18/9/2331

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