Next Article in Journal
Biogas Potential from the Anaerobic Digestion of Potato Peels: Process Performance and Kinetics Evaluation
Next Article in Special Issue
Design of Diamond Power Devices: Application to Schottky Barrier Diodes
Previous Article in Journal
Hydrate Stability and Methane Recovery from Gas Hydrate through CH4–CO2 Replacement in Different Mass Transfer Scenarios
Previous Article in Special Issue
Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention
Open AccessReview

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Consiglio Nazionale delle Ricerche–Istituto per la Microelettronica e Microsistemi (CNR-IMM), 95121 Catania, Italy
Author to whom correspondence should be addressed.
Energies 2019, 12(12), 2310;
Received: 21 May 2019 / Revised: 11 June 2019 / Accepted: 12 June 2019 / Published: 17 June 2019
(This article belongs to the Special Issue Volume II: Semiconductor Power Devices)
This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at the SiO2/SiC interfaces (interface states, channel mobility, trapping phenomena, etc.). First, the most common electrical characterization techniques of SiO2/SiC interfaces are presented (e.g., capacitance- and current-voltage techniques, transient capacitance, and current measurements). Then, examples of electrical characterizations at the nanoscale (by scanning probe microscopy techniques) are given, to get insights on the homogeneity of the SiO2/SiC interface and the local interfacial doping effects occurring upon annealing. The trapping effects occurring in SiO2/4H-SiC MOS systems are elucidated using advanced capacitance and current measurements as a function of time. In particular, these measurements give information on the density (~1011 cm−2) of near interface oxide traps (NIOTs) present inside the SiO2 layer and their position with respect to the interface with SiC (at about 1–2 nm). Finally, it will be shown that a comparison of the electrical data with advanced structural and chemical characterization methods makes it possible to ascribe the NIOTs to the presence of a sub-stoichiometric SiOx layer at the interface. View Full-Text
Keywords: 4H-SiC; MOSFET; trapping states; electrical characterization; nanoscale characterization 4H-SiC; MOSFET; trapping states; electrical characterization; nanoscale characterization
Show Figures

Figure 1

MDPI and ACS Style

Fiorenza, P.; Giannazzo, F.; Roccaforte, F. Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review. Energies 2019, 12, 2310.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map

Back to TopTop