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Sensors 2004, 4(10), 163-169; https://doi.org/10.3390/s41000163

Fabrication of Thin-Film LAPS with Amorphous Silicon

1
ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
2
University of Applied Sciences, Aachen (Division Jülich), Laboratory for Chemical Sensors and Biosensors, Ginsterweg 1, D-52428, Jülich, Germany
3
ISG-2, Research Centre Jülich, 52425 Jülich, Germany
4
IPV, Research Centre Jülich, 52425 Jülich, Germany
5
Humboldt University Berlin, Brook-Taylor-Str. 2, 12489 Berlin, Germany
*
Author to whom correspondence should be addressed.
Received: 9 August 2004 / Accepted: 27 August 2004 / Published: 30 October 2004
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Abstract

To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics and pH sensitivity of the fabricated a-Si LAPS were investigated. View Full-Text
Keywords: LAPS; chemical imaging sensor; amorphous silicon; pH sensor LAPS; chemical imaging sensor; amorphous silicon; pH sensor
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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MDPI and ACS Style

Yoshinobu, T.; Schöning, M.J.; Finger, F.; Moritz, W.; Iwasaki, H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors 2004, 4, 163-169.

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