Article Versions Notes

Ranjbar Koleibi E, Lemaire W, Koua K, Benhouria M, Bostani R, Serri Mazandarani M, Gauthier L-P, Besrour M, Ménard J, Majdoub M, et al. Design and Implementation of a Low-Power Biopotential Amplifier in 28 nm CMOS Technology with a Compact Die-Area of 2500 μm² and an Ultra-High Input Impedance. Sensors. 2025; 25(7):2320. https://doi.org/10.3390/s25072320

Ranjbar Koleibi, Esmaeil, William Lemaire, Konin Koua, Maher Benhouria, Reza Bostani, Mahziar Serri Mazandarani, Luis-Philip Gauthier, Marwan Besrour, Jérémy Ménard, Mahdi Majdoub, and et al. 2025. "Design and Implementation of a Low-Power Biopotential Amplifier in 28 nm CMOS Technology with a Compact Die-Area of 2500 μm² and an Ultra-High Input Impedance" Sensors 25, no. 7: 2320. https://doi.org/10.3390/s25072320

Ranjbar Koleibi, E., Lemaire, W., Koua, K., Benhouria, M., Bostani, R., Serri Mazandarani, M., Gauthier, L.-P., Besrour, M., Ménard, J., Majdoub, M., Gosselin, B., Roy, S., & Fontaine, R. (2025). Design and Implementation of a Low-Power Biopotential Amplifier in 28 nm CMOS Technology with a Compact Die-Area of 2500 μm² and an Ultra-High Input Impedance. Sensors, 25(7), 2320. https://doi.org/10.3390/s25072320