Article Versions Notes

Bi R, Chen R, Wu S, Ma H, Zhang H, Liu X, He J, Hu J. A High-Sensitivity, Low-Noise, and Low-Hysteresis Tunneling Magnetoresistance Sensor Based on Structural Optimization of Magnetic Tunnel Junctions. Sensors. 2025; 25(6):1730. https://doi.org/10.3390/s25061730

Bi, Ran, Ruiying Chen, Shilin Wu, Haoyu Ma, Huiquan Zhang, Xinting Liu, Jinliang He, and Jun Hu. 2025. "A High-Sensitivity, Low-Noise, and Low-Hysteresis Tunneling Magnetoresistance Sensor Based on Structural Optimization of Magnetic Tunnel Junctions" Sensors 25, no. 6: 1730. https://doi.org/10.3390/s25061730

Bi, R., Chen, R., Wu, S., Ma, H., Zhang, H., Liu, X., He, J., & Hu, J. (2025). A High-Sensitivity, Low-Noise, and Low-Hysteresis Tunneling Magnetoresistance Sensor Based on Structural Optimization of Magnetic Tunnel Junctions. Sensors, 25(6), 1730. https://doi.org/10.3390/s25061730