Article Versions Notes

Fu Y, Peng Z, Dong Z, Li P, Wei Y, Zhang D, Zuo Y, Zhu J, Niu S. A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits. Sensors. 2024; 24(23):7659. https://doi.org/10.3390/s24237659

Fu, Yanjun, Zhigang Peng, Zhiyong Dong, Pei Li, Yuan Wei, Dongya Zhang, Yinghong Zuo, Jinhui Zhu, and Shengli Niu. 2024. "A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits" Sensors 24, no. 23: 7659. https://doi.org/10.3390/s24237659

Fu, Y., Peng, Z., Dong, Z., Li, P., Wei, Y., Zhang, D., Zuo, Y., Zhu, J., & Niu, S. (2024). A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits. Sensors, 24(23), 7659. https://doi.org/10.3390/s24237659